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PJD80N03_L2_00001

Panjit International Inc.

Product No:

PJD80N03_L2_00001

Package:

TO-252

Batch:

-

Datasheet:

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Description:

30V N-CHANNEL ENHANCEMENT MODE M

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1323 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta), 55W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 80A (Tc)
Mfr Panjit International Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD80

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