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PMPB40SNA115

NXP USA Inc.

Product No:

PMPB40SNA115

Manufacturer:

NXP USA Inc.

Package:

DFN2020MD-6

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1000

$0.304

$304

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	612 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	43mOhm @ 4.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	DFN2020MD-6
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Series	-
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12.9A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk