Home / Single FETs, MOSFETs / PMXB350UPEZ

PMXB350UPEZ

NXP Semiconductors

Product No:

PMXB350UPEZ

Manufacturer:

NXP Semiconductors

Package:

DFN1010D-3

Batch:

Datasheet:

Description:

NEXPERIA PMXB350UPE - 20 V, P-CH

Quantity:

Delivery:

Payment:

In Stock : 675337

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

4515

$0.0665

$300.2475

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PMXB350UPEZ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PMXB350UPEZ and the required quantity in your RFQ. IICSEMI provides the latest quote for PMXB350UPEZ without requiring registration. Latest information on PMXB350UPEZ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PMXB350UPEZ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	447mOhm @ 1.2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	DFN1010D-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	360mW (Ta), 5.68W (Tc)
Series	-
Package / Case	3-XDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)
Mfr	NXP Semiconductors
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Bulk