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PSMN085-150K,518-NEX

Nexperia USA Inc.

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Nexperia USA Inc.

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8-SO

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Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	85mOhm @ 3.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	3.5W (Tc)
Series	TrenchMOS™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.5A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk