Home / Single FETs, MOSFETs / PSMN1R2-25YLC,115

PSMN1R2-25YLC,115

Nexperia USA Inc.

Product No:

PSMN1R2-25YLC,115

Manufacturer:

Nexperia USA Inc.

Package:

LFPAK56, Power-SO8

Batch:

Datasheet:

Description:

MOSFET N-CH 25V 100A LFPAK56

Quantity:

Delivery:

Payment:

In Stock : 11875

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.0545

$1.0545
10

$0.9462

$9.462
100

$0.737485

$73.7485
500

$0.609235

$304.6175

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PSMN1R2-25YLC,115, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PSMN1R2-25YLC,115 and the required quantity in your RFQ. IICSEMI provides the latest quote for PSMN1R2-25YLC,115 without requiring registration. Latest information on PSMN1R2-25YLC,115: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PSMN1R2-25YLC,115 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4173 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.3mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.95V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	179W (Tc)
Series	-
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PSMN1R2