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PSMN1R8-30PL,127

NXP Semiconductors

Product No:

PSMN1R8-30PL,127

Manufacturer:

NXP Semiconductors

Package:

TO-220AB

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Description:

NEXPERIA PSMN1R8-30PL - 100A, 30

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10180 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.8mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.15V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	270W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	NXP Semiconductors
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk
Base Product Number	PSMN1R8