Home / Single FETs, MOSFETs / PSMN6R3-120ESQ

PSMN6R3-120ESQ

Nexperia USA Inc.

Product No:

PSMN6R3-120ESQ

Manufacturer:

Nexperia USA Inc.

Package:

I2PAK

Batch:

Datasheet:

Description:

MOSFET N-CH 120V 70A I2PAK

Quantity:

Delivery:

Payment:

In Stock : 439

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.337

$2.337
10

$1.938

$19.38
100

$1.54223

$154.223

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PSMN6R3-120ESQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PSMN6R3-120ESQ and the required quantity in your RFQ. IICSEMI provides the latest quote for PSMN6R3-120ESQ without requiring registration. Latest information on PSMN6R3-120ESQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PSMN6R3-120ESQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11384 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	207.1 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.7mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	405W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube