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R6024ENZ1C9

Rohm Semiconductor

Product No:

R6024ENZ1C9

Manufacturer:

Rohm Semiconductor

Package:

TO-247

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Datasheet:

Description:

MOSFET N-CH 600V 24A TO247

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Product Information

Parameter Info

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	165mOhm @ 11.3A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	120W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube