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R6025FNZ1C9

Rohm Semiconductor

Product No:

R6025FNZ1C9

Manufacturer:

Rohm Semiconductor

Package:

TO-247

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Datasheet:

Description:

MOSFET N-CH 600V 25A TO247

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	180mOhm @ 12.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	R6025