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RCD100N19TL

Rohm Semiconductor

Product No:

RCD100N19TL

Manufacturer:

Rohm Semiconductor

Package:

CPT3

Batch:

Datasheet:

Description:

MOSFET N-CH 190V 10A CPT3

Quantity:

Delivery:

Payment:

In Stock : 1108

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.2825

$1.2825
10

$1.0469

$10.469
100

$0.814055

$81.4055
500

$0.690004

$345.002
1000

$0.562077

$562.077

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	182mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	CPT3
Drain to Source Voltage (Vdss)	190 V
Power Dissipation (Max)	850mW (Ta), 20W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RCD100