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RF1S640

Harris Corporation

Product No:

RF1S640

Manufacturer:

Harris Corporation

Package:

I2PAK (TO-262)

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Datasheet:

Description:

18A, 200V, 0.180 OHM, N-CHANNEL

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1275 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk