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RFB18N10CSVM

Harris Corporation

Product No:

RFB18N10CSVM

Manufacturer:

Harris Corporation

Package:

TO-220-5

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-5
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	79W (Tc)
Series	-
Package / Case	TO-220-5
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk