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RFD16N05LSM

Harris Corporation

Product No:

RFD16N05LSM

Manufacturer:

Harris Corporation

Package:

TO-252AA

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1356

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

503

$0.57

$286.71

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	47mOhm @ 16A, 5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250mA
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	50 V
Power Dissipation (Max)	60W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Package	Tube
Base Product Number	RFD16