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RFH10N50

Harris Corporation

Product No:

RFH10N50

Manufacturer:

Harris Corporation

Package:

TO-218 Isolated

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 302

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 77

    $3.7145

    $286.0165

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-218 Isolated
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 150W (Tc)
Series -
Package / Case TO-218-3 Isolated Tab, TO-218AC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Harris Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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