Home / Single FETs, MOSFETs / RJ1P10BBHTL1

RJ1P10BBHTL1

Rohm Semiconductor

Product No:

RJ1P10BBHTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-263AB

Batch:

Datasheet:

Description:

NCH 100V 170A, TO-263AB, POWER M

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RJ1P10BBHTL1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RJ1P10BBHTL1 and the required quantity in your RFQ. IICSEMI provides the latest quote for RJ1P10BBHTL1 without requiring registration. Latest information on RJ1P10BBHTL1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RJ1P10BBHTL1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	189W (Ta)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	170A (Ta), 105A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)