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RJK6002DPH-E0#T2

Renesas Electronics America Inc

Product No:

RJK6002DPH-E0#T2

Package:

TO-251

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 2A TO251

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 6.8Ohm @ 1A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id -
Supplier Device Package TO-251
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 30W (Tc)
Series -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Mfr Renesas Electronics America Inc
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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