Home / Diode Arrays / RJS6004WDPK-00#T0

RJS6004WDPK-00#T0

Renesas Electronics America Inc

Product No:

RJS6004WDPK-00#T0

Manufacturer:

Renesas Electronics America Inc

Package:

TO-3P

Batch:

Datasheet:

Description:

DIODE GEN PURP 600V 20A

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RJS6004WDPK-00#T0, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RJS6004WDPK-00#T0 and the required quantity in your RFQ. IICSEMI provides the latest quote for RJS6004WDPK-00#T0 without requiring registration. Latest information on RJS6004WDPK-00#T0: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RJS6004WDPK-00#T0 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	15 ns
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-3P
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Series	-
Package / Case	TO-220-3 Full Pack
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Diode Configuration	1 Pair Common Cathode
Mfr	Renesas Electronics America Inc
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tube
Current - Average Rectified (Io) (per Diode)	10A (DC)
Operating Temperature - Junction	-55°C ~ 150°C