Home / Single, Pre-Biased Bipolar Transistors / RN1101MFV,L3F

RN1101MFV,L3F

Toshiba Semiconductor and Storage

Product No:

RN1101MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

VESM

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Datasheet:

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

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Parameter Info

User Guide

Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Resistor - Base (R1)	4.7 kOhms
Mounting Type	Surface Mount
Product Status	Not For New Designs
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	VESM
Series	-
Transistor Type	NPN - Pre-Biased
Package / Case	SOT-723
Power - Max	150 mW
Resistor - Emitter Base (R2)	4.7 kOhms
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	500nA
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Base Product Number	RN1101

Detail Info

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