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RQ1E100XNTR

Rohm Semiconductor

Product No:

RQ1E100XNTR

Manufacturer:

Rohm Semiconductor

Package:

TSMT8

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Datasheet:

Description:

MOSFET N-CH 30V 10A TSMT8

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Product Information

Parameter Info

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.5mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TSMT8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	550mW (Ta)
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ1E100