Home / Single FETs, MOSFETs / RQ3E080BNTB

RQ3E080BNTB

Rohm Semiconductor

Product No:

RQ3E080BNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 8A 8HSMT

Quantity:

Delivery:

Payment:

In Stock : 41091

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.475

$0.475
10

$0.3876

$3.876
100

$0.2641

$26.41
500

$0.198037

$99.0185
1000

$0.148532

$148.532

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RQ3E080BNTB, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RQ3E080BNTB and the required quantity in your RFQ. IICSEMI provides the latest quote for RQ3E080BNTB without requiring registration. Latest information on RQ3E080BNTB: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RQ3E080BNTB latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15.2mOhm @ 8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3E080