Home / Single FETs, MOSFETs / RQ3E100BNTB

RQ3E100BNTB

Rohm Semiconductor

Product No:

RQ3E100BNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 10A 8HSMT

Quantity:

Delivery:

Payment:

In Stock : 96650

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3895

$0.3895
10

$0.3306

$3.306
100

$0.24719

$24.719
500

$0.194199

$97.0995
1000

$0.150062

$150.062

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RQ3E100BNTB, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RQ3E100BNTB and the required quantity in your RFQ. IICSEMI provides the latest quote for RQ3E100BNTB without requiring registration. Latest information on RQ3E100BNTB: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RQ3E100BNTB latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3E100