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RQ3E100MNTB1

Rohm Semiconductor

Product No:

RQ3E100MNTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

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Datasheet:

Description:

MOSFET N-CH 30V 10A HSMT8

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	9.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.3mOhm @ 10A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3E100