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RQ3E120ATTB

Rohm Semiconductor

Product No:

RQ3E120ATTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 30V 12A 8HSMT

Quantity:

Delivery:

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Payment:

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In Stock : 23203

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.703

    $0.703

  • 10

    $0.608

    $6.08

  • 100

    $0.420945

    $42.0945

  • 500

    $0.351747

    $175.8735

  • 1000

    $0.299364

    $299.364

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSMT (3.2x3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RQ3E120

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