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RQ3E150BNTB

Rohm Semiconductor

Product No:

RQ3E150BNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 15A 8HSMT

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.3mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSMT (3.2x3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RQ3E150

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