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RQ3P300BETB1

Rohm Semiconductor

Product No:

RQ3P300BETB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

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Datasheet:

Description:

MOSFET N-CH 100V 10A/36A 8HSMT

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	19.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	21mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 200µA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2W (Ta), 32W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 36A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	RQ3P300