Home / Single FETs, MOSFETs / RQ6E085BNTCR

RQ6E085BNTCR

Rohm Semiconductor

Product No:

RQ6E085BNTCR

Manufacturer:

Rohm Semiconductor

Package:

TSMT6 (SC-95)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 8.5A SOT457

Quantity:

Delivery:

Payment:

In Stock : 3505

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.836

$0.836
10

$0.68685

$6.8685
100

$0.533995

$53.3995
500

$0.452599

$226.2995
1000

$0.368686

$368.686

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RQ6E085BNTCR, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RQ6E085BNTCR and the required quantity in your RFQ. IICSEMI provides the latest quote for RQ6E085BNTCR without requiring registration. Latest information on RQ6E085BNTCR: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RQ6E085BNTCR latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	32.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	14.4mOhm @ 8.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TSMT6 (SC-95)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.25W (Tc)
Series	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	RQ6E085