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RQK0609CQDQS#H1

Renesas Electronics America Inc

Product No:

RQK0609CQDQS#H1

Package:

UPAK

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 60V 4A UPAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.4V @ 1mA
Supplier Device Package UPAK
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1.5W (Ta)
Series -
Package / Case TO-243AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr Renesas Electronics America Inc
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)

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