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RS1E200BNTB

Rohm Semiconductor

Product No:

RS1E200BNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

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Datasheet:

Description:

MOSFET N-CH 30V 20A 8HSOP

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.9mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3W (Ta), 25W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RS1E