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RS6G120BGTB1

Rohm Semiconductor

Product No:

RS6G120BGTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

Batch:

-

Datasheet:

pdf.png

Description:

NCH 40V 210A, HSOP8, POWER MOSFE

Quantity:

Delivery:

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In Stock : 2105

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 1

    $3.2585

    $3.2585

  • 10

    $2.73885

    $27.3885

  • 100

    $2.215875

    $221.5875

  • 500

    $1.969654

    $984.827

  • 1000

    $1.686526

    $1686.526

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.34mOhm @ 90A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSOP
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 104W (Ta)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RS6G

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