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RT1C060UNTR

Rohm Semiconductor

Product No:

RT1C060UNTR

Manufacturer:

Rohm Semiconductor

Package:

8-TSST

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Datasheet:

Description:

MOSFET N-CH 20V 6A 8TSST

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	28mOhm @ 6A, 4.5V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	8-TSST
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	650mW (Ta)
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RT1C060