Home / Single Diodes / S1JLR2G

S1JLR2G

Taiwan Semiconductor Corporation

Product No:

S1JLR2G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

Sub SMA

Batch:

Datasheet:

Description:

DIODE GEN PURP 600V 1A SUB SMA

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for S1JLR2G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include S1JLR2G and the required quantity in your RFQ. IICSEMI provides the latest quote for S1JLR2G without requiring registration. Latest information on S1JLR2G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs S1JLR2G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.8 µs
Capacitance @ Vr, F	9pF @ 4V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	Sub SMA
Current - Reverse Leakage @ Vr	5 µA @ 600 V
Series	-
Package / Case	DO-219AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	S1J