Home / Single FETs, MOSFETs / SCT2160KEHRC11

SCT2160KEHRC11

Rohm Semiconductor

Product No:

SCT2160KEHRC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Batch:

Datasheet:

Description:

1200V, 22A, THD, SILICON-CARBIDE

Quantity:

Delivery:

Payment:

In Stock : 450

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$19.855

$19.855
10

$17.6415

$176.415
100

$15.430185

$1543.0185
500

$13.167095

$6583.5475

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of SCT2160KEHRC11, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include SCT2160KEHRC11 and the required quantity in the RFQ. GOOD can get the latest quotations of SCT2160KEHRC11 without registration. SCT2160KEHRC11 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	208mOhm @ 7A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 2.5mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	165W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2160