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SCT2280KEGC11

Rohm Semiconductor

Product No:

SCT2280KEGC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Batch:

Datasheet:

Description:

1200V, 14A, THD, SILICON-CARBIDE

Quantity:

Delivery:

Payment:

In Stock : 2240

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$11.932

$11.932
10

$10.5089

$105.089
100

$9.088365

$908.8365
500

$8.236348

$4118.174
1000

$7.554723

$7554.723

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	667 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	364mOhm @ 4A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1.4mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	108W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2280