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SCT2280KEHRC11

Rohm Semiconductor

Product No:

SCT2280KEHRC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Batch:

Datasheet:

Description:

1200V, 14A, THD, SILICON-CARBIDE

Quantity:

Delivery:

Payment:

In Stock : 450

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$13.718

$13.718
10

$12.08495

$120.8495
100

$10.451615

$1045.1615
500

$9.471804

$4735.902
1000

$8.68793

$8687.93

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	667 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 400 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	364mOhm @ 4A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1.4mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	108W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2280