Home / Single FETs, MOSFETs / SCT30N120

SCT30N120

STMicroelectronics

Product No:

SCT30N120

Manufacturer:

STMicroelectronics

Package:

HiP247™

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 40A HIP247

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SCT30N120, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SCT30N120 and the required quantity in your RFQ. IICSEMI provides the latest quote for SCT30N120 without requiring registration. Latest information on SCT30N120: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SCT30N120 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.6V @ 1mA (Typ)
Supplier Device Package	HiP247™
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	270W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	SCT30