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SCT3160KLGC11

Rohm Semiconductor

Product No:

SCT3160KLGC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

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Datasheet:

Description:

SICFET N-CH 1200V 17A TO247N

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	398 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	208mOhm @ 5A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 2.5mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	103W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3160