Home / Single FETs, MOSFETs / SCTH40N120G2V7AG

SCTH40N120G2V7AG

STMicroelectronics

Product No:

SCTH40N120G2V7AG

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Batch:

Datasheet:

Description:

SICFET N-CH 650V 33A H2PAK-7

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SCTH40N120G2V7AG, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SCTH40N120G2V7AG and the required quantity in your RFQ. IICSEMI provides the latest quote for SCTH40N120G2V7AG without requiring registration. Latest information on SCTH40N120G2V7AG: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SCTH40N120G2V7AG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	H2PAK-7
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	250W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	SCTH40