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SCTH60N120G2-7

STMicroelectronics

Product No:

SCTH60N120G2-7

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

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Description:

SICFET N-CH 1200V 60A H2PAK-7

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	H2PAK-7
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	390W (Tc)
Series	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)