Home / Single FETs, MOSFETs / SCTW35N65G2VAG

SCTW35N65G2VAG

STMicroelectronics

Product No:

SCTW35N65G2VAG

Manufacturer:

STMicroelectronics

Package:

HiP247™

Batch:

Datasheet:

Description:

SICFET N-CH 650V 45A HIP247

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SCTW35N65G2VAG, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SCTW35N65G2VAG and the required quantity in your RFQ. IICSEMI provides the latest quote for SCTW35N65G2VAG without requiring registration. Latest information on SCTW35N65G2VAG: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SCTW35N65G2VAG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	HiP247™
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	240W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Package	Tube
Base Product Number	SCTW35