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SCTWA10N120

STMicroelectronics

Product No:

SCTWA10N120

Manufacturer:

STMicroelectronics

Package:

HiP247™ Long Leads

Batch:

-

Datasheet:

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Description:

IC POWER MOSFET 1200V HIP247

Quantity:

Delivery:

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Payment:

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In Stock : 500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.488

    $10.488

  • 10

    $9.6349

    $96.349

  • 25

    $9.2359

    $230.8975

  • 100

    $8.137415

    $813.7415

  • 250

    $7.738016

    $1934.504

  • 500

    $7.23881

    $3619.405

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.5V @ 250µA (Typ)
Supplier Device Package HiP247™ Long Leads
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 110W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr STMicroelectronics
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCTWA10

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