Home / Single FETs, MOSFETs / SCTWA90N65G2V

SCTWA90N65G2V

STMicroelectronics

Product No:

SCTWA90N65G2V

Manufacturer:

STMicroelectronics

Package:

TO-247 Long Leads

Batch:

Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 650

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SCTWA90N65G2V, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SCTWA90N65G2V and the required quantity in your RFQ. IICSEMI provides the latest quote for SCTWA90N65G2V without requiring registration. Latest information on SCTWA90N65G2V: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SCTWA90N65G2V latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	TO-247 Long Leads
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	565W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	119A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube