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SE10FJ-M3/I

Vishay General Semiconductor - Diodes Division

Product No:

SE10FJ-M3/I

Package:

DO-219AB (SMF)

Batch:

-

Datasheet:

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Description:

DIODE GEN PURP 600V 1A DO219AB

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 780 ns
Capacitance @ Vr, F 7.5pF @ 4V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package DO-219AB (SMF)
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Series -
Package / Case DO-219AB
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 1 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number SE10

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