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SI1480BDH-T1-GE3

Vishay Siliconix

Product No:

SI1480BDH-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SC-70-6

Batch:

-

Datasheet:

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Description:

N-CHNNEL 100-V (D-S) MOSFET SC70

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 206 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 212mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SC-70-6
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.5W (Ta), 2.6W (Tc)
Series TrenchFET®
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta), 2.38A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI1480

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