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SI2301BDS-T1-E3

Vishay Siliconix

Product No:

SI2301BDS-T1-E3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

MOSFET P-CH 20V 2.2A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 38082

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4275

$0.4275
10

$0.3439

$3.439
100

$0.233985

$23.3985
500

$0.175465

$87.7325
1000

$0.131604

$131.604

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 2.8A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI2301