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SI2304DS,215

Nexperia USA Inc.

Product No:

SI2304DS,215

Manufacturer:

Nexperia USA Inc.

Package:

TO-236AB

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Datasheet:

Description:

MOSFET N-CH 30V 1.7A TO236AB

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Product Information

Parameter Info

User Guide

Operating Temperature	-65°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	117mOhm @ 500mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	TO-236AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	830mW (Tc)
Series	TrenchMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)