Home / Single FETs, MOSFETs / SI2305ADS-T1-GE3

SI2305ADS-T1-GE3

Vishay Siliconix

Product No:

SI2305ADS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

MOSFET P-CH 8V 5.4A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI2305ADS-T1-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI2305ADS-T1-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI2305ADS-T1-GE3 without requiring registration. Latest information on SI2305ADS-T1-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI2305ADS-T1-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	40mOhm @ 4.1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	800mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	8 V
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI2305