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SI2312BDS-T1-E3

Vishay Siliconix

Product No:

SI2312BDS-T1-E3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

MOSFET N-CH 20V 3.9A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 46521

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.5225

$0.5225
10

$0.44745

$4.4745
100

$0.333925

$33.3925
500

$0.26239

$131.195
1000

$0.202749

$202.749

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	850mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	750mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI2312