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SI2319DS-T1-BE3

Vishay Siliconix

Product No:

SI2319DS-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

P-CHANNEL 40-V (D-S) MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1840

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.646

$0.646
10

$0.5605

$5.605
100

$0.38798

$38.798
500

$0.324159

$162.0795
1000

$0.27588

$275.88

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	82mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	750mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)