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SI2325DS-T1-E3

Vishay Siliconix

Product No:

SI2325DS-T1-E3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

MOSFET P-CH 150V 530MA SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 28192

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.9215

$0.9215
10

$0.8208

$8.208
100

$0.640015

$64.0015
500

$0.528694

$264.347
1000

$0.417382

$417.382

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	750mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI2325