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SI2366DS-T1-BE3

Vishay Siliconix

Product No:

SI2366DS-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

N-CHANNEL 30-V (D-S) MOSFET

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.418

$0.418
10

$0.3591

$3.591
100

$0.24947

$24.947
500

$0.194788

$97.394
1000

$0.158318

$158.318

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	335 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	36mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta), 5.8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)